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Relation between flow, power, and presence of carrier gas during plasma deposition of thin filmsKAGANOWICZ, G; ROBINSON, J. W.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1986, Vol 4, Num 4, pp 1901-1904, issn 0734-2101Article

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On the role of oxygen and hydrogen in diamond-forming dischargesMUCHA, J. A; FLAMM, D. L; IBBOTSON, D. E et al.Journal of applied physics. 1989, Vol 65, Num 9, pp 3448-3452, issn 0021-8979, 5 p.Article

Correlations between plasma parameters and the deposition of microcrystalline silicon films by plasma of argon and hydrogenAVNI, R; CARMI, U; MANORY, R et al.Journal of applied physics. 1987, Vol 62, Num 5, pp 2044-2049, issn 0021-8979Article

The effect of ion irradiation on the nature of internal stresses in carbon coatingsKLUBOVICH, V. V; EGOROV, V. D; BOBROVSKIY, V. V et al.Fizika i himiâ obrabotki materialov. 1995, Num 1, pp 13-16, issn 0015-3214Article

Electrical characteristics and growth kinetics in discharges used for plasma deposition of amorphous carbonCATHERINE, Y; COUDERC, P.Thin solid films. 1986, Vol 144, Num 2, pp 265-280, issn 0040-6090Article

Hydrogenated amorphous silicon formation by flux control and hydrogen effects on the growth mechanismTOYODA, H; SUGAI, H; KATO, K et al.Applied physics letters. 1986, Vol 48, Num 24, pp 1648-1650, issn 0003-6951Article

In situ spectroscopic ellipsometry study of the growth of microcrystalline siliconKUMAR, S; DREVILLON, B; GODET, C et al.Journal of applied physics. 1986, Vol 60, Num 4, pp 1542-1544, issn 0021-8979Article

12C18Cr10Ni1Ti steel condensate structure and properties and their changes under the following thermal treatmentFILIPPOV, A. M; DEGTYAREV, M. V; CHASCHUKHINA, T. I et al.Fizika i himiâ obrabotki materialov. 1995, Num 1, pp 50-57, issn 0015-3214Article

Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate biasROCA I CABARROCAS, P; MORIN, P; CHU, V et al.Journal of applied physics. 1991, Vol 69, Num 5, pp 2942-2950, issn 0021-8979, 9 p.Article

Formation of condensations in young stellar outflows by a thermal instabilityDE GOUVEIA DAL PINO, E. M; OPHER, R.Astronomy and astrophysics (Berlin. Print). 1990, Vol 231, Num 2, pp 571-580, issn 0004-6361Article

Effects of noble gases on diamond deposition for methane-hydrogen microwave plasmasZHU, W; INSPEKTOR, A; BADZIAN, A. R et al.Journal of applied physics. 1990, Vol 68, Num 4, pp 1489-1496, issn 0021-8979, 8 p.Article

Formation of cubic boron nitride film on Si with boron buffer layersOKAMOTO, M; YOKOYAMA, H; OSAKA, Y et al.Japanese journal of applied physics. 1990, Vol 29, Num 5, pp 930-933, issn 0021-4922, 4 p., 1Article

Laser processing for deposition of high T_c superconducting filmsRICHTER, A; KESSLER, G.Solid state communications. 1989, Vol 70, Num 12, pp 1147-1150, issn 0038-1098Article

Structural studies of argon-sputtered amorphous carbon films by means of extended x-ray-absorption fine structureCOMELLI, G; STOHR, J; ROBINSON, C. J et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 11, pp 7511-7519, issn 0163-1829Article

Structure and physical properties of plasmagrown amorphous hydrogenated carbon filmsCOUDERC, P; CATHERINE, Y.Thin solid films. 1987, Vol 146, Num 1, pp 93-107, issn 0040-6090Article

Low temperature epitaxial growth of highly-conductive ZnSe layers in mixed plasma of hydrogen and hydrogen chlorideYAMAUCHI, S; HARIU, T; MATSUSHITA, K et al.Japanese journal of applied physics. 1987, Vol 26, Num 6, pp L893-L895, issn 0021-4922, 2Article

In situ investigation of the growth of rf glow-discharge deposited amorphous germanium and silicon filmsANTOINE, A. M; DREVILLON, B; ROCA I CABARROCAS, P et al.Journal of applied physics. 1987, Vol 61, Num 7, pp 2501-2508, issn 0021-8979Article

Intrinsic stress and hydrogen bonding in glow-discharge amourphous silicon filmsKAKINUMA, H; NISHIKAWA, S; WATANABE, T et al.Journal of applied physics. 1986, Vol 59, Num 9, pp 3110-3115, issn 0021-8979Article

Transparent carbon films: comparison of properties between ion- and plasma-deposition processesPELLICORI, S. F; PETERSON, C. M; HENSON, T. P et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1986, Vol 4, Num 5, pp 2350-2355, issn 0734-2101Article

Properties of thin copper films, condensed from a copper plasma with ion energies between 2 and 150 eVMAUSBACH, M; EHRICH, H; MÜLLER, K. G et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 5, pp 1909-1916, issn 1071-1023Conference Paper

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Magnetic condensation of a photoexcited plasma during fluoropolymer sputteringSUGIMOTO, I; MIYAKE, S.Journal of applied physics. 1990, Vol 67, Num 4, pp 2093-2099, issn 0021-8979, 7 p.Article

Iron doped amorphous hydrogenated carbon nitride?HE-XIANG HAN; FELDMAN, B. J; FRAUNDORF, G et al.Solid state communications. 1989, Vol 71, Num 10, pp 801-803, issn 0038-1098Article